PSMN1R4-30YLDX 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN1R4-30YLDX
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 166W
- Total Gate Charge (Qg@Vgs): 54.8nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 3840pF@15V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.42mΩ@10V,25A
- Package: SOT-669
- Manufacturer: Nexperia